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AUIRFN8458TR

AUIRFN8458TR Infineon Technologies

Infineon_AUIRFN8458_DataSheet_v01_00_EN-3360495.pdf
Hersteller: Infineon Technologies
MOSFET 40V Dual N Channel HEXFET
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Technische Details AUIRFN8458TR Infineon Technologies

Description: MOSFET 2N-CH 40V 43A PQFN, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 3.9V @ 25µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 34W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

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AUIRFN8458TR AUIRFN8458TR Infineon Technologies AUIRFN8458.pdf Description: MOSFET 2N-CH 40V 43A PQFN
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN8458TR AUIRFN8458TR Infineon Technologies AUIRFN8458.pdf Description: MOSFET 2N-CH 40V 43A PQFN
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN8458TR AUIRFN8458.pdf
AUIRFN8458TR
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 43A PQFN
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN8458TR AUIRFN8458.pdf
AUIRFN8458TR
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 43A PQFN
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH