AUIRFN8458TR Infineon Technologies
auf Bestellung 1574 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.98 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.64 EUR |
| 250+ | 2.43 EUR |
| 500+ | 2.20 EUR |
| 1000+ | 1.88 EUR |
| 2500+ | 1.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AUIRFN8458TR Infineon Technologies
Description: MOSFET 2N-CH 40V 43A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V, Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 25µA, Supplier Device Package: PQFN (5x6).
Weitere Produktangebote AUIRFN8458TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
AUIRFN8458TR | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 40V 43A Automotive 8-Pin QFN EP T/R |
Produkt ist nicht verfügbar |
|
 |
AUIRFN8458TR | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 43A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Supplier Device Package: PQFN (5x6) |
Produkt ist nicht verfügbar |
|
|
|
AUIRFN8458TR | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 43A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 34W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Supplier Device Package: PQFN (5x6) |
Produkt ist nicht verfügbar |