AUIRFR3504Z ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - AUIRFR3504Z - AUIRFR3504 20V-40V N-CHANNEL AUTOMOTIVE
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Produktrezensionen
Produktbewertung abgeben
Technische Details AUIRFR3504Z ROCHESTER ELECTRONICS
Description: MOSFET N-CH 40V 42A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote AUIRFR3504Z
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
AUIRFR3504Z | Infineon Technologies |
Description: MOSFET N-CH 40V 42A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
AUIRFR3504Z | Infineon / IR |
MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
AUIRFR3504Z | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Power dissipation: 90W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 30nC On-state resistance: 9mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AUIRFR3504Z |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFR3504Z |
![]() |
Hersteller: Infineon / IR
MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms
MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFR3504Z |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 30nC
On-state resistance: 9mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
Im Einkaufswagen
Stück im Wert von UAH



