AUIRFR5305 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK Tube
auf Bestellung 2612 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 3.27 EUR |
| 52+ | 2.94 EUR |
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Technische Details AUIRFR5305 Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote AUIRFR5305 nach Preis ab 2.94 EUR bis 6.84 EUR
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AUIRFR5305 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK Tube |
auf Bestellung 2612 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR5305 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFR5305 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFR5305 | Hersteller : Infineon Technologies |
MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms |
auf Bestellung 1533 Stücke: Lieferzeit 14-28 Tag (e) |
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| AUIRFR5305 | Hersteller : Infineon |
MOSFET P-CH 55V 31A Automotive AUIRFR5305 International Rectifier TAUIRFR5305 |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRFR5305 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 55V 31A Automotive 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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AUIRFR5305 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 31A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |