AUIRFR8405TRL Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH Si 40V 211A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1334 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 2.37 EUR |
| 68+ | 2.02 EUR |
| 100+ | 1.90 EUR |
| 250+ | 1.79 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AUIRFR8405TRL Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V, Power Dissipation (Max): 163W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: TO-252AA (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote AUIRFR8405TRL nach Preis ab 1.56 EUR bis 2.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1334 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| AUIRFR8405TRL | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 211A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
| AUIRFR8405TRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Pulsed drain current: 804A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 100A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
AUIRFR8405TRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 100A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V Power Dissipation (Max): 163W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
AUIRFR8405TRL | Hersteller : Infineon Technologies |
MOSFETs Auto 40V N-Ch FET 1.98mOhms 100A |
Produkt ist nicht verfügbar |
|||||||||||||||
| AUIRFR8405TRL | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Power dissipation: 163W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.98mΩ Mounting: SMD Gate charge: 155nC Kind of channel: enhancement Pulsed drain current: 804A |
Produkt ist nicht verfügbar |