AUIRFS3306

AUIRFS3306 Infineon Technologies


auirfs3306.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 60V 160A Automotive 3-Pin(2+Tab) D2PAK Tube
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Technische Details AUIRFS3306 Infineon Technologies

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 150µA, Supplier Device Package: PG-TO263-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V.

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AUIRFS3306 AUIRFS3306 Hersteller : Infineon Technologies auirfs3306.pdf?fileId=5546d462533600a4015355b687d814bb Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 50 V
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AUIRFS3306 AUIRFS3306 Hersteller : Infineon / IR Infineon_AUIRFS3306_DS_v01_02_EN-1730966.pdf MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET
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