AUIRFS4010-7TRL International Rectifier
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Technische Details AUIRFS4010-7TRL International Rectifier
Description: MOSFET N-CH 100V 180A TO263, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Grade: Automotive, Supplier Device Package: D2PAK-7, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Bulk.
Weitere Produktangebote AUIRFS4010-7TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AUIRFS4010-7TRL | International Rectifier |
 Description: MOSFET N-CH 100V 180A TO263Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
AUIRFS4010-7TRL | Infineon Technologies |
Description: MOSFET N-CH 100V 190A D2PAK-7P Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Grade: Automotive Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
AUIRFS4010-7TRL | Infineon Technologies |
MOSFETs 100V 190A 4 mOhm Automotive MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRFS4010-7TRL |
|
Hersteller: International Rectifier
Description: MOSFET N-CH 100V 180A TO263
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Bulk
Description: MOSFET N-CH 100V 180A TO263
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFS4010-7TRL |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK-7P
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 190A D2PAK-7P
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Grade: Automotive
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 380W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFS4010-7TRL |
|
Hersteller: Infineon Technologies
MOSFETs 100V 190A 4 mOhm Automotive MOSFET
MOSFETs 100V 190A 4 mOhm Automotive MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH