| Anzahl | Preis |
|---|---|
| 1+ | 10.56 EUR |
| 10+ | 7.94 EUR |
| 100+ | 6.65 EUR |
| 500+ | 5.77 EUR |
| 800+ | 5.54 EUR |
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Technische Details AUIRFS4127TRL Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V.
Weitere Produktangebote AUIRFS4127TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AUIRFS4127TRL | Infineon Technologies |
Description: MOSFET N-CH 200V 72A D2PAKCurrent - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AUIRFS4127TRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Description: MOSFET N-CH 200V 72A D2PAK
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH



