AUIRFS8407-7P Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 306A 7-Pin(6+Tab) D2PAK Tube Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 60+ | 9.14 EUR |
| 100+ | 8.55 EUR |
| 500+ | 7.93 EUR |
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Technische Details AUIRFS8407-7P Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7, Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-7, Vgs(th) (Max) @ Id: 3.9V @ 150µA, Power Dissipation (Max): 231W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tube.
Weitere Produktangebote AUIRFS8407-7P nach Preis ab 6.79 EUR bis 14.87 EUR
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AUIRFS8407-7P | Infineon Technologies |
Trans MOSFET N-CH Si 40V 306A 7-Pin(6+Tab) D2PAK Tube Automotive AEC-Q101 |
auf Bestellung 30900 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRFS8407-7P | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAK-7 Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.9V @ 150µA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tube |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AUIRFS8407-7P |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 306A 7-Pin(6+Tab) D2PAK Tube Automotive AEC-Q101
Trans MOSFET N-CH Si 40V 306A 7-Pin(6+Tab) D2PAK Tube Automotive AEC-Q101
auf Bestellung 30900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 9.14 EUR |
| 100+ | 8.55 EUR |
| 500+ | 7.93 EUR |
| 1000+ | 7.32 EUR |
| 10000+ | 6.79 EUR |
| AUIRFS8407-7P |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
Description: MOSFET N-CH 40V 240A D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds: 7437 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tube
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.87 EUR |