Technische Details AUIRFS8408-7P Infineon
Description: MOSFET N-CH 40V 240A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TO263-7-900, Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 294W (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 240A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy.
Weitere Produktangebote AUIRFS8408-7P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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AUIRFS8408-7P | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAKQualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TO263-7-900 Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
AUIRFS8408-7P | Infineon Technologies |
MOSFETs Auto 40V N-Ch FET 1.3mOhm 195A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRFS8408-7P |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TO263-7-900
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Description: MOSFET N-CH 40V 240A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TO263-7-900
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFS8408-7P |
![]() |
Hersteller: Infineon Technologies
MOSFETs Auto 40V N-Ch FET 1.3mOhm 195A
MOSFETs Auto 40V N-Ch FET 1.3mOhm 195A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



