Technische Details AUIRFSL4010 Infineon
Description: MOSFET N CH 100V 180A TO262, Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Not For New Designs, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote AUIRFSL4010
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
AUIRFSL4010 | Infineon Technologies |
Description: MOSFET N CH 100V 180A TO262Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Part Status: Not For New Designs Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
AUIRFSL4010 | Infineon Technologies |
MOSFETs Automotive MOSFET 10 hm, 143 nC Qg, D2Pa |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AUIRFSL4010 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N CH 100V 180A TO262
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Not For New Designs
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N CH 100V 180A TO262
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Not For New Designs
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFSL4010 |
![]() |
Hersteller: Infineon Technologies
MOSFETs Automotive MOSFET 10 hm, 143 nC Qg, D2Pa
MOSFETs Automotive MOSFET 10 hm, 143 nC Qg, D2Pa
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH



