AUIRFZ46NL

AUIRFZ46NL Infineon Technologies


auirfz46ns-1730847.pdf Hersteller: Infineon Technologies
MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET
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Technische Details AUIRFZ46NL Infineon Technologies

Description: MOSFET N-CH 55V 39A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V, Power Dissipation (Max): 3.8W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V.

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AUIRFZ46NL AUIRFZ46NL Hersteller : Infineon Technologies auirfz46ns.pdf Trans MOSFET N-CH Si 55V 53A Automotive 3-Pin(3+Tab) TO-262 Tube
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AUIRFZ46NL AUIRFZ46NL Hersteller : Infineon Technologies AUIRFZ46NS%2CNL.pdf Description: MOSFET N-CH 55V 39A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V
Produkt ist nicht verfügbar