AUIRL7732S2TR Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Produktrezensionen
Produktbewertung abgeben
Technische Details AUIRL7732S2TR Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SC, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V, Power Dissipation (Max): 2.2W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 50µA, Supplier Device Package: DIRECTFET™ SC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V.
Weitere Produktangebote AUIRL7732S2TR nach Preis ab 1.28 EUR bis 2.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AUIRL7732S2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 14A DIRECTFET SC Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ SC Vgs(th) (Max) @ Id: 2.5V @ 50µA Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric SC Packaging: Cut Tape (CT) |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AUIRL7732S2TR |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SC
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SC
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ SC
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SC
Packaging: Cut Tape (CT)
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.35 EUR |
| 2000+ | 1.28 EUR |