AUIRL7736M2TR Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 179A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 67A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5055 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4800+ | 2.70 EUR |
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Technische Details AUIRL7736M2TR Infineon Technologies
Description: MOSFET N-CH 40V 179A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric M4, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 179A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 67A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 150µA, Supplier Device Package: DirectFET™ Isometric M4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5055 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AUIRL7736M2TR nach Preis ab 2.70 EUR bis 7.41 EUR
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AUIRL7736M2TR | Hersteller : International Rectifier |
Description: MOSFET N-CH 40V 179A DIRECTFET Packaging: Bulk Package / Case: DirectFET™ Isometric M4 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 67A, 10V Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: DirectFET™ Isometric M4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5055 pF @ 25 V Qualification: AEC-Q101 |
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