Technische Details AUIRLR014N Infineon / IR
Description: MOSFET N-CH 55V 10A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D-PAK (TO-252AA), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V.
Weitere Produktangebote AUIRLR014N nach Preis ab 1.03 EUR bis 1.03 EUR
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| AUIRLR014N | Hersteller : International Rectifier |
 N-MOSFET 55V 10A 140mΩ 28W AUIRLR014N International Rectifier TAUIRLR014NAnzahl je Verpackung: 25 Stücke |
auf Bestellung 225 Stücke: Lieferzeit 7-14 Tag (e) |
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AUIRLR014N | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 10A Automotive 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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AUIRLR014N | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 10A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D-PAK (TO-252AA) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V |
Produkt ist nicht verfügbar |