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AUIRLR3410TR Infineon


IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon

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Technische Details AUIRLR3410TR Infineon

Description: MOSFET N-CH 100V 17A DPAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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AUIRLR3410TR AUIRLR3410TR Infineon Technologies IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 17A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLR3410TR AUIRLR3410TR Infineon Technologies infn_s_a0002297192_1-2271242.pdf MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLR3410TR IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLR3410TR infn_s_a0002297192_1-2271242.pdf
Hersteller: Infineon Technologies
MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH