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Technische Details AUIRLS4030TRL Infineon / IR
Description: MOSFET N-CH 100V 180A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 370W (Tc).
Weitere Produktangebote AUIRLS4030TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
AUIRLS4030TRL | Infineon Technologies |
Description: MOSFET N-CH 100V 180A D2PAKQualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 370W (Tc) |
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Im Einkaufswagen Stück im Wert von UAH |
| AUIRLS4030TRL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Description: MOSFET N-CH 100V 180A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 370W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



