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AUIRLU3114Z-701TRL

AUIRLU3114Z-701TRL International Rectifier


IRSDS11934-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: PG-TO251-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2992 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
256+2.83 EUR
Mindestbestellmenge: 256
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Technische Details AUIRLU3114Z-701TRL International Rectifier

Description: AUIRLU3114Z - 20V-40V N-CHANNEL, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: PG-TO251-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote AUIRLU3114Z-701TRL nach Preis ab 2.83 EUR bis 2.83 EUR

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AUIRLU3114Z-701TRL AUIRLU3114Z-701TRL Hersteller : Infineon Technologies IRSDS11934-1.pdf?t.download=true&u=5oefqw Description: AUIRLU3114Z - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: PG-TO251-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
256+2.83 EUR
Mindestbestellmenge: 256