AUIRS2124STR Infineon Technologies
auf Bestellung 2381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.46 EUR |
| 10+ | 4.89 EUR |
| 100+ | 4.01 EUR |
| 250+ | 3.82 EUR |
| 500+ | 3.41 EUR |
| 1000+ | 2.87 EUR |
| 2500+ | 2.78 EUR |
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Technische Details AUIRS2124STR Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 80ns, 80ns, Channel Type: Single, Driven Configuration: High-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel MOSFET, Current - Peak Output (Source, Sink): 500mA, 500mA, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Weitere Produktangebote AUIRS2124STR
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Preis |
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AUIRS2124STR | Hersteller : Infineon Technologies |
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AUIRS2124STR | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 80ns, 80ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |