AUIRS21811S Infineon Technologies
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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Technische Details AUIRS21811S Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Qualification: AEC-Q100, Grade: Automotive, Part Status: Obsolete, Current - Peak Output (Source, Sink): 1.9A, 2.3A, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Gate Type: IGBT, MOSFET (N-Channel), Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 60ns, 35ns (Max), Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 600 V, Input Type: Non-Inverting, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, DigiKey Programmable: Not Verified.
Weitere Produktangebote AUIRS21811S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
AUIRS21811S | Infineon / IR |
Gate Drivers High Low Side DRVR 600V 160ns 1.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRS21811S |
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Hersteller: Infineon / IR
Gate Drivers High Low Side DRVR 600V 160ns 1.9A
Gate Drivers High Low Side DRVR 600V 160ns 1.9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


