AUIRS2301S Infineon Technologies
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Technische Details AUIRS2301S Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Qualification: AEC-Q100, DigiKey Programmable: Not Verified, Grade: Automotive, Current - Peak Output (Source, Sink): 200mA, 350mA, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Gate Type: IGBT, N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 130ns, 50ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 600 V, Input Type: Inverting, Voltage - Supply: 5V ~ 20V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Weitere Produktangebote AUIRS2301S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
AUIRS2301S | Infineon Technologies |
Gate Drivers High Low 600V DRVR 5V -20V 220ns 50ns |
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| AUIRS2301S |
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Hersteller: Infineon Technologies
Gate Drivers High Low 600V DRVR 5V -20V 220ns 50ns
Gate Drivers High Low 600V DRVR 5V -20V 220ns 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


