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BAP51L,315

BAP51L,315 NXP USA Inc.

BAP51L_1.pdf
Hersteller: NXP USA Inc.
Description: RF DIODE PIN 60V 500MW DFN1006-2
Power Dissipation (Max): 500 mW
Current - Max: 100 mA
Supplier Device Package: DFN1006-2
Voltage - Peak Reverse (Max): 60V
Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
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Technische Details BAP51L,315 NXP USA Inc.

Description: RF DIODE PIN 60V 500MW DFN1006-2, Power Dissipation (Max): 500 mW, Current - Max: 100 mA, Supplier Device Package: DFN1006-2, Voltage - Peak Reverse (Max): 60V, Resistance @ If, F: 1.5Ohm @ 100mA, 100MHz, Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz, Operating Temperature: -65°C ~ 150°C (TJ), Diode Type: PIN - Single, Package / Case: SOD-882, Packaging: Tape & Reel (TR).