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BAP55L,315

BAP55L,315 NXP USA Inc.


BAP55L_Prelim.pdf Hersteller: NXP USA Inc.
Description: RF DIODE PIN 50V 500MW DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: DFN1006-2
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
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Technische Details BAP55L,315 NXP USA Inc.

Description: RF DIODE PIN 50V 500MW DFN1006-2, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Diode Type: PIN - Single, Operating Temperature: -65°C ~ 150°C (TJ), Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz, Resistance @ If, F: 700mOhm @ 100mA, 100MHz, Voltage - Peak Reverse (Max): 50V, Supplier Device Package: DFN1006-2, Current - Max: 100 mA, Power Dissipation (Max): 500 mW.

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BAP55L,315 BAP55L,315 Hersteller : NXP USA Inc. BAP55L_Prelim.pdf Description: RF DIODE PIN 50V 500MW DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: DFN1006-2
Current - Max: 100 mA
Power Dissipation (Max): 500 mW
Produkt ist nicht verfügbar
BAP55L,315 BAP55L,315 Hersteller : NXP Semiconductors BAP55L_Prelim.pdf PIN Diodes BAP55L/SOD882/REELP2//
Produkt ist nicht verfügbar