BAS16WH6327 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GEN PURP 80V 250MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7397+ | 0.064 EUR |
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Technische Details BAS16WH6327 Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT323, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOT-323, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 75 V.
Weitere Produktangebote BAS16WH6327 nach Preis ab 0.074 EUR bis 0.61 EUR
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BAS 16W H6327 | Hersteller : Infineon Technologies |
Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR |
auf Bestellung 1522 Stücke: Lieferzeit 10-14 Tag (e) |
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