BAS4002LE6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-TSLP-2-1
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Bulk
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Technische Details BAS4002LE6327 Infineon Technologies
Description: DIODE SCHOTT 40V 120MA TSLP-2-1, Current - Reverse Leakage @ Vr: 1 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: 150°C, Supplier Device Package: PG-TSLP-2-1, Current - Average Rectified (Io): 120mA, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Bulk.
Weitere Produktangebote BAS4002LE6327 nach Preis ab 0.14 EUR bis 0.7 EUR
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BAS 40-02L E6327 | Infineon Technologies |
Schottky Diodes & Rectifiers Silicon Schottky Didode |
auf Bestellung 2096 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAS 40-02L E6327 |
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Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers Silicon Schottky Didode
Schottky Diodes & Rectifiers Silicon Schottky Didode
auf Bestellung 2096 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.16 EUR |
| 5000+ | 0.14 EUR |