BAS116HYFHT116 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Rectifier Diode Switching 100V 0.215A 3000ns Automotive AEC-Q101 3-Pin SSD T/R
Rectifier Diode Switching 100V 0.215A 3000ns Automotive AEC-Q101 3-Pin SSD T/R
auf Bestellung 5900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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2653+ | 0.059 EUR |
2740+ | 0.055 EUR |
2778+ | 0.052 EUR |
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Technische Details BAS116HYFHT116 Rohm Semiconductor
Description: DIODE GEN PURP 80V 215MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: SOT-23, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAS116HYFHT116 nach Preis ab 0.094 EUR bis 0.62 EUR
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BAS116HYFHT116 | Hersteller : Rohm Semiconductor | Rectifier Diode Switching 100V 0.215A 3000ns Automotive AEC-Q101 3-Pin SSD T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS116HYFHT116 | Hersteller : ROHM Semiconductor | Diodes - General Purpose, Power, Switching Low-leakage, 80V, 215mA, SOT-23, Single, Automotive Switching Diode |
auf Bestellung 9260 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HYFHT116 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HYFHT116 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
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