BAS116HYT116 Rohm Semiconductor
auf Bestellung 2940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1532+ | 0.1 EUR |
| 1676+ | 0.09 EUR |
| 1957+ | 0.074 EUR |
| 2062+ | 0.068 EUR |
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Technische Details BAS116HYT116 Rohm Semiconductor
Description: DIODE GEN PURP 80V 215MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: SOT-23, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V.
Weitere Produktangebote BAS116HYT116 nach Preis ab 0.069 EUR bis 0.58 EUR
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BAS116HYT116 | Hersteller : Rohm Semiconductor |
 Description: DIODE GEN PURP 80V 215MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HYT116 | Hersteller : ROHM Semiconductor |
Diodes - General Purpose, Power, Switching Low-leakage, 80V, 215mA, SOT-23, Single, Switching Diode |
auf Bestellung 5869 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HYT116 | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 5892 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HYT116 | Hersteller : Rohm Semiconductor |
Rectifier Diode Switching 100V 0.215A 3000ns 3-Pin SSD T/R |
auf Bestellung 1290 Stücke: Lieferzeit 14-21 Tag (e) |