BAS116HYT116 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.095 EUR |
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Technische Details BAS116HYT116 ROHM Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: SOT-23, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V.
Weitere Produktangebote BAS116HYT116 nach Preis ab 0.13 EUR bis 0.51 EUR
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BAS116HYT116 | Rohm Semiconductor |
 Description: DIODE STANDARD 80V 215MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 3752 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS116HYT116 | Rohm Semiconductor |
Diode Switching 100V 0.215A 3-Pin SSD T/R |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BAS116HYT116 | Rohm Semiconductor |
Diode Switching 100V 0.215A 3-Pin SSD T/R |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BAS116HYT116 |
|
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 3752 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 57+ | 0.31 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| BAS116HYT116 |
|
Hersteller: Rohm Semiconductor
Diode Switching 100V 0.215A 3-Pin SSD T/R
Diode Switching 100V 0.215A 3-Pin SSD T/R
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BAS116HYT116 |
|
Hersteller: Rohm Semiconductor
Diode Switching 100V 0.215A 3-Pin SSD T/R
Diode Switching 100V 0.215A 3-Pin SSD T/R
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH