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BAS116LP3-7

BAS116LP3-7 Diodes Incorporated

BAS116LP3.pdf
Hersteller: Diodes Incorporated
Small Signal Switching Diodes Ultra SM LL Diode 85V 60V 215mA 250mW
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.57 EUR
10+0.39 EUR
100+0.16 EUR
1000+0.095 EUR
2500+0.088 EUR
10000+0.074 EUR
20000+0.072 EUR
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Technische Details BAS116LP3-7 Diodes Incorporated

Description: DIODE STD 85V 215MA X3DFN06032, Packaging: Tape & Reel (TR), Package / Case: 0201 (0603 Metric), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 3pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: X3-DFN0603-2, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 85 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 mA, Current - Reverse Leakage @ Vr: 10 nA @ 75 V.

Weitere Produktangebote BAS116LP3-7

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BAS116LP3-7 BAS116LP3-7 Diodes Incorporated BAS116LP3.pdf Description: DIODE STD 85V 215MA X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 mA
Current - Reverse Leakage @ Vr: 10 nA @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS116LP3-7 BAS116LP3-7 Diodes Incorporated BAS116LP3.pdf Description: DIODE STD 85V 215MA X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 mA
Current - Reverse Leakage @ Vr: 10 nA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116LP3-7 BAS116LP3.pdf
BAS116LP3-7
Hersteller: Diodes Incorporated
Description: DIODE STD 85V 215MA X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 mA
Current - Reverse Leakage @ Vr: 10 nA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS116LP3-7 BAS116LP3.pdf
BAS116LP3-7
Hersteller: Diodes Incorporated
Description: DIODE STD 85V 215MA X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: X3-DFN0603-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 150 mA
Current - Reverse Leakage @ Vr: 10 nA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH