BAS16L,315 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details BAS16L,315 Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: DFN1006-2, Current - Average Rectified (Io): 215mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BAS16L,315 nach Preis ab 0.032 EUR bis 0.28 EUR
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BAS16L,315 | Nexperia |
Small Signal Switching Diodes DIODE-SS 100V 215MA |
auf Bestellung 95022 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16L,315 | Nexperia USA Inc. |
Description: DIODE STD 100V 215MA DFN10062 Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1006-2 Current - Average Rectified (Io): 215mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 40500 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAS16L,315 | NXP/Nexperia/We-En |
Імпульсний діод SMD, Ur, В = 100, Iо, A = 0,215, Cj, пФ = 1,5 @ 0 В, 1 МГц, If, A = 0,15, Ir, мкА = 0,5 @ 80 В, trr, нс = 4, Uf, В = 1,25, Тексп, °С = -65...+150, Темп.опір,°C/Вт = 500,... Діоди Корпус: SOD-882 Од. вим: шт Anzahl je Verpackung: 10000 Stücke |
verfügbar 6300 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| BAS16L,315 |
|
Hersteller: Nexperia
Small Signal Switching Diodes DIODE-SS 100V 215MA
Small Signal Switching Diodes DIODE-SS 100V 215MA
auf Bestellung 95022 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 0.18 EUR |
| 22+ | 0.13 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.06 EUR |
| 1000+ | 0.042 EUR |
| 5000+ | 0.039 EUR |
| 10000+ | 0.032 EUR |
| BAS16L,315 |
|
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STD 100V 215MA DFN10062
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 105+ | 0.17 EUR |
| 148+ | 0.12 EUR |
| 170+ | 0.1 EUR |
| BAS16L,315 |
|
Hersteller: NXP/Nexperia/We-En
Імпульсний діод SMD, Ur, В = 100, Iо, A = 0,215, Cj, пФ = 1,5 @ 0 В, 1 МГц, If, A = 0,15, Ir, мкА = 0,5 @ 80 В, trr, нс = 4, Uf, В = 1,25, Тексп, °С = -65...+150, Темп.опір,°C/Вт = 500,... Діоди Корпус: SOD-882 Од. вим: шт
Anzahl je Verpackung: 10000 Stücke
Імпульсний діод SMD, Ur, В = 100, Iо, A = 0,215, Cj, пФ = 1,5 @ 0 В, 1 МГц, If, A = 0,15, Ir, мкА = 0,5 @ 80 В, trr, нс = 4, Uf, В = 1,25, Тексп, °С = -65...+150, Темп.опір,°C/Вт = 500,... Діоди Корпус: SOD-882 Од. вим: шт
Anzahl je Verpackung: 10000 Stücke
verfügbar 6300 Stücke: