| Anzahl | Preis |
|---|---|
| 16+ | 0.18 EUR |
| 23+ | 0.12 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.053 EUR |
| 2500+ | 0.051 EUR |
| 5000+ | 0.048 EUR |
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Technische Details BAS16LD,315 Nexperia
Description: DIODE STD 100V 215MA DFN1006D2, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: DFN1006D-2, Current - Average Rectified (Io): 215mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 2-XDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BAS16LD,315 nach Preis ab 0.16 EUR bis 1.01 EUR
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BAS16LD,315 | Hersteller : Nexperia USA Inc. |
 Description: DIODE STD 100V 215MA DFN1006D2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: DFN1006D-2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Qualification: AEC-Q101 |
auf Bestellung 8820 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAS16LD,315 | Hersteller : Nexperia |
DIODE GP 100V 215MA SOD882D Група товару: Діоди та діодні збірки Од. вим: шт |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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