BAS16LPQ-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: DIODE GEN PURP 75V 300MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.053 EUR |
| 30000+ | 0.052 EUR |
| 50000+ | 0.047 EUR |
| 100000+ | 0.041 EUR |
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Technische Details BAS16LPQ-7B Diodes Incorporated
Description: DIODE GEN PURP 75V 300MA 2DFN, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: X1-DFN1006-2, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 75 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS16LPQ-7B nach Preis ab 0.037 EUR bis 0.037 EUR
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