BAS16QA-QZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 290MA DFN1010D3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1010D-3
Current - Average Rectified (Io): 290mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details BAS16QA-QZ Nexperia USA Inc.
Description: DIODE STD 100V 290MA DFN1010D3, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 500 µA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: 150°C, Supplier Device Package: DFN1010D-3, Current - Average Rectified (Io): 290mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
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Verfügbarkeit |
Preis |
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BAS16QA-QZ | Hersteller : Nexperia |
Diodes - General Purpose, Power, Switching BAS16QA-Q/SOT1215/DFN1010D-3 |
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