BAS16WH6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT323
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323
Current - Average Rectified (Io): 250mA
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Technische Details BAS16WH6327 Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT323, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk, Current - Reverse Leakage @ Vr: 1 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOT-323, Current - Average Rectified (Io): 250mA.
Weitere Produktangebote BAS16WH6327 nach Preis ab 0.067 EUR bis 0.42 EUR
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BAS 16W H6327 | Infineon Technologies |
Small Signal Switching Diodes AF DIGITAL TRANSISTOR |
auf Bestellung 537 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAS 16W H6327 |
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Hersteller: Infineon Technologies
Small Signal Switching Diodes AF DIGITAL TRANSISTOR
Small Signal Switching Diodes AF DIGITAL TRANSISTOR
auf Bestellung 537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.42 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.09 EUR |
| 3000+ | 0.079 EUR |
| 6000+ | 0.067 EUR |