BAS21GWJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 200V 225MA SOD123
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 225mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
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Technische Details BAS21GWJ Nexperia USA Inc.
Description: DIODE GEN PURP 200V 225MA SOD123, Grade: Automotive, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOD-123, Current - Average Rectified (Io): 225mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 100 nA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Voltage - DC Reverse (Vr) (Max): 200 V.
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BAS21GWJ | Hersteller : Nexperia USA Inc. |
Description: DIODE GEN PURP 200V 225MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 225mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
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BAS21GWJ | Hersteller : Nexperia |
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