
BAS21M3T5G ON Semiconductor
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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8000+ | 0.05 EUR |
16000+ | 0.05 EUR |
24000+ | 0.04 EUR |
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Technische Details BAS21M3T5G ON Semiconductor
Description: DIODE STANDARD 250V 200MA SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-723, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 250 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V.
Weitere Produktangebote BAS21M3T5G nach Preis ab 0.04 EUR bis 0.27 EUR
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BAS21M3T5G | Hersteller : ON Semiconductor |
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auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS21M3T5G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS21M3T5G | Hersteller : ON Semiconductor |
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auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS21M3T5G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
auf Bestellung 15763 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS21M3T5G | Hersteller : onsemi |
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auf Bestellung 16650 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS21M3T5G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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BAS21M3T5G | Hersteller : ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Kind of package: reel; tape Power dissipation: 0.64W Leakage current: 0.1mA Capacitance: 5pF Anzahl je Verpackung: 1 Stücke |
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BAS21M3T5G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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BAS21M3T5G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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BAS21M3T5G | Hersteller : ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Kind of package: reel; tape Power dissipation: 0.64W Leakage current: 0.1mA Capacitance: 5pF |
Produkt ist nicht verfügbar |