BAS 28 E6327 Infineon Technologies
Hersteller: Infineon Technologies
Diodes - General Purpose, Power, Switching Silicon Switching Diode 200mA
Diodes - General Purpose, Power, Switching Silicon Switching Diode 200mA
auf Bestellung 8836 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.78 EUR |
10+ | 0.55 EUR |
100+ | 0.28 EUR |
1000+ | 0.2 EUR |
3000+ | 0.17 EUR |
9000+ | 0.15 EUR |
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Technische Details BAS 28 E6327 Infineon Technologies
Description: SWITCHING DIODE ARRAY, Packaging: Bulk, Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 200mA (DC), Supplier Device Package: PG-SOT-143-3D, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 100 nA @ 75 V.
Weitere Produktangebote BAS 28 E6327
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BAS28E6327 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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BAS28E6327 | Hersteller : Infineon Technologies |
Description: SWITCHING DIODE ARRAY Packaging: Bulk Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT-143-3D Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V |
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