
BAS40 RFG Taiwan Semiconductor
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 0.52 EUR |
10+ | 0.29 EUR |
100+ | 0.14 EUR |
1000+ | 0.12 EUR |
3000+ | 0.06 EUR |
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Technische Details BAS40 RFG Taiwan Semiconductor
Description: DIODE SCHOTTKY 40V 200MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 5 ns, Technology: Schottky, Capacitance @ Vr, F: 5pF @ 1V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA, Current - Reverse Leakage @ Vr: 200 nA @ 40 V.
Weitere Produktangebote BAS40 RFG nach Preis ab 0.27 EUR bis 0.65 EUR
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BAS40 RFG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 40 V |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS40 RFG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 200 nA @ 40 V |
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