BAS40E6433HTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
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Technische Details BAS40E6433HTMA1 Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23, Current - Reverse Leakage @ Vr: 1 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA, Voltage - DC Reverse (Vr) (Max): 40 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: PG-SOT23, Current - Average Rectified (Io): 120mA, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 100 ps, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAS40E6433HTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
BAS40E6433HTMA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 40V 120MA PGSOT23Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 120mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 100 ps Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAS40E6433HTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

