Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > BAS516,H3F
BAS516,H3F

BAS516,H3F Toshiba Semiconductor and Storage

BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516 Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.072 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details BAS516,H3F Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 100V 250MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 ns, Technology: Standard, Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: ESC, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 200 nA @ 80 V.

Weitere Produktangebote BAS516,H3F nach Preis ab 0.068 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BAS516,H3F BAS516,H3F Hersteller : Toshiba BAS516_datasheet_en_20221219-1139675.pdf Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
auf Bestellung 278046 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
127+0.41 EUR
174+ 0.3 EUR
328+ 0.16 EUR
500+ 0.12 EUR
1000+ 0.086 EUR
2000+ 0.073 EUR
4000+ 0.068 EUR
Mindestbestellmenge: 127
BAS516,H3F BAS516,H3F Hersteller : Toshiba Semiconductor and Storage BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516 Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 7160 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
Mindestbestellmenge: 63
BAS516,H3F BAS516,H3F Hersteller : Toshiba docget.pdf Rectifier Diode Switching Si 100V 0.5A 3ns 2-Pin ESC T/R
Produkt ist nicht verfügbar