BAS516,L3F Toshiba
auf Bestellung 23278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.15 EUR |
| 28+ | 0.1 EUR |
| 100+ | 0.092 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.039 EUR |
| 5000+ | 0.025 EUR |
| 8000+ | 0.023 EUR |
Produktrezensionen
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Technische Details BAS516,L3F Toshiba
Description: DIODE STANDARD 100V 250MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 ns, Technology: Standard, Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: ESC, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 200 nA @ 80 V.
Weitere Produktangebote BAS516,L3F nach Preis ab 0.065 EUR bis 0.16 EUR
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BAS516,L3F | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE STANDARD 100V 250MA ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
auf Bestellung 535 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS516,L3F | Hersteller : Toshiba |
Diode Switching Si 100V 0.5A 2-Pin ESC T/R |
Produkt ist nicht verfügbar |
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BAS516,L3F | Hersteller : Toshiba |
Rectifier Diode Switching Si 100V 0.5A 3ns 2-Pin ESC T/R |
Produkt ist nicht verfügbar |
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BAS516,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 100V 250MA ESC Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: ESC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
Produkt ist nicht verfügbar |