BAS581-02V-HG3-08 Vishay Semiconductors
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.3 EUR |
| 5000+ | 0.058 EUR |
| 8000+ | 0.053 EUR |
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Technische Details BAS581-02V-HG3-08 Vishay Semiconductors
Description: DIODE SCHOTTKY 40V 30MA SOD523, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 2pF @ 1V, 1MHz, Current - Average Rectified (Io): 30mA, Supplier Device Package: SOD-523, Operating Temperature - Junction: 125°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA, Current - Reverse Leakage @ Vr: 500 nA @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS581-02V-HG3-08
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BAS581-02V-HG3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 30MA SOD523Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V Qualification: AEC-Q101 |
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