BAS81-GS18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOT 40V 30MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 45+ | 0.40 EUR |
| 100+ | 0.20 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.10 EUR |
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Technische Details BAS81-GS18 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 40V 30MA SOD80, Packaging: Tape & Reel (TR), Package / Case: DO-213AC, MINI-MELF, SOD-80, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz, Current - Average Rectified (Io): 30mA, Supplier Device Package: SOD-80 MiniMELF, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Current - Reverse Leakage @ Vr: 200 nA @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
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