
BAS83-GS18 Vishay Semiconductors
auf Bestellung 8967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 0.62 EUR |
10+ | 0.43 EUR |
100+ | 0.22 EUR |
1000+ | 0.13 EUR |
2500+ | 0.11 EUR |
10000+ | 0.09 EUR |
20000+ | 0.08 EUR |
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Technische Details BAS83-GS18 Vishay Semiconductors
Description: DIODE SCHOT 60V 30MA SOD80, Packaging: Tape & Reel (TR), Package / Case: DO-213AC, MINI-MELF, SOD-80, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz, Current - Average Rectified (Io): 30mA, Supplier Device Package: SOD-80 MiniMELF, Operating Temperature - Junction: 125°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA, Current - Reverse Leakage @ Vr: 200 nA @ 60 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS83-GS18
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BAS83-GS18 | Hersteller : Vishay |
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BAS83-GS18 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.6pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 60 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |