BAT1502LSE6433XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
| Anzahl | Preis |
|---|---|
| 14+ | 1.3 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 2000+ | 0.33 EUR |
| 5000+ | 0.29 EUR |
| 10000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAT1502LSE6433XTMA1 Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP23, Packaging: Cut Tape (CT), Package / Case: 0201 (0603 Metric), Diode Type: Schottky - Single, Operating Temperature: 150°C (TJ), Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz, Resistance @ If, F: 10Ohm @ 50mA, 1MHz, Voltage - Peak Reverse (Max): 4V, Supplier Device Package: PG-TSSLP-2-3, Part Status: Active, Current - Max: 110 mA, Power Dissipation (Max): 100 mW.
Weitere Produktangebote BAT1502LSE6433XTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
BAT1502LSE6433XTMA1 | Hersteller : Infineon Technologies |
Silicon RF Schottky Diode Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
