| Anzahl | Preis |
|---|---|
| 8+ | 0.4 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.076 EUR |
| 5000+ | 0.065 EUR |
| 10000+ | 0.04 EUR |
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Technische Details BAT32ALSYL Nexperia
Description: DIODE SCHOT 30V 200MA DFN1006BD2, Current - Reverse Leakage @ Vr: 50 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: 150°C, Supplier Device Package: DFN1006BD-2, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 25pF @ 1V, 1MHz, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAT32ALSYL nach Preis ab 0.16 EUR bis 0.42 EUR
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BAT32ALSYL | Hersteller : Nexperia USA Inc. |
Description: DIODE SCHOT 30V 200MA DFN1006BD2Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: DFN1006BD-2 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 25pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Cut Tape (CT) |
auf Bestellung 1144 Stücke: Lieferzeit 10-14 Tag (e) |
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BAT32ALSYL | Hersteller : Nexperia USA Inc. |
Description: DIODE SCHOT 30V 200MA DFN1006BD2Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C Supplier Device Package: DFN1006BD-2 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 25pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |

