BAT54-HE3-18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 30V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 0.4 EUR |
| 70+ | 0.25 EUR |
| 113+ | 0.16 EUR |
| 500+ | 0.11 EUR |
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Technische Details BAT54-HE3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOT233, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 5 ns, Technology: Schottky, Capacitance @ Vr, F: 10pF @ 1V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: 125°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA, Current - Reverse Leakage @ Vr: 2 µA @ 25 V, Qualification: AEC-Q101.
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