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BAT54A/DG/B3215 NXP


PHGLS25648-1.pdf?t.download=true&u=5oefqw Hersteller: NXP
Description: NXP - BAT54A/DG/B3215 - MISCELLANEOUS MOSFETS
tariffCode: 85411000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Lieferzeit 14-21 Tag (e)
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Technische Details BAT54A/DG/B3215 NXP

Description: DIODE ARR SCHOTT 30V 200MA SOT23, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 5 ns, Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200mA (DC), Supplier Device Package: SOT-23-3, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA, Current - Reverse Leakage @ Vr: 2 µA @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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BAT54A/DG/B3215 BAT54A/DG/B3215 Hersteller : NXP USA Inc. PHGLS25648-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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