BAV170M315 NXP USA Inc.
Hersteller: NXP USA Inc.Description: DIODE
Packaging: Bulk
Part Status: Active
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Supplier Device Package: DFN1006-3
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 320mA (DC)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 480000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11632+ | 0.05 EUR |
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Technische Details BAV170M315 NXP USA Inc.
Description: DIODE, Packaging: Bulk, Part Status: Active, Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Supplier Device Package: DFN1006-3, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 320mA (DC), Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V.
Weitere Produktangebote BAV170M315
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BAV170M315 | Hersteller : NXP |
Description: NXP - BAV170M315 - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 480000 Stücke: Lieferzeit 14-21 Tag (e) |