auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.029 EUR |
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Technische Details BAV170QAZ Nexperia
Description: DIODE ARR GP 75V 180MA DFN1010D3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 180mA (DC), Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Qualification: AEC-Q101.
Weitere Produktangebote BAV170QAZ nach Preis ab 0.036 EUR bis 0.4 EUR
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BAV170QAZ | Hersteller : NXP Semiconductors |
 Diode Switching 85V 0.32A 3-Pin DFN-D EP T/R |
auf Bestellung 164300 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV170QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARR GP 75V 180MA DFN1010D3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 180mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4848 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV170QAZ | Hersteller : Nexperia |
Small Signal Switching Diodes Low-leakage double diode |
auf Bestellung 4904 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV170QAZ | Hersteller : Nexperia |
Diode Switching 85V 0.32A 3-Pin DFN-D EP T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV170QAZ | Hersteller : NEXPERIA |
Rectifier Diode Switching 75V 0.32A 3ns Automotive 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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BAV170QAZ | Hersteller : Nexperia |
Diode Switching 85V 0.32A 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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| BAV170QAZ | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 320mA; 3us; DFN1010D-3; Ufmax: 1.25V Mounting: SMD Case: DFN1010D-3 Max. off-state voltage: 85V Max. forward voltage: 1.25V Load current: 320mA Semiconductor structure: common cathode; double Reverse recovery time: 3µs Max. forward impulse current: 4A Application: automotive industry Power dissipation: 0.54W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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BAV170QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARR GP 75V 180MA DFN1010D3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 180mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BAV170QAZ | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 320mA; 3us; DFN1010D-3; Ufmax: 1.25V Mounting: SMD Case: DFN1010D-3 Max. off-state voltage: 85V Max. forward voltage: 1.25V Load current: 320mA Semiconductor structure: common cathode; double Reverse recovery time: 3µs Max. forward impulse current: 4A Application: automotive industry Power dissipation: 0.54W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |