BAV19W-G3-08 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.15 EUR |
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Technische Details BAV19W-G3-08 Vishay Semiconductors
Description: DIODE GEN PURP 100V 250MA SOD123, Current - Reverse Leakage @ Vr: 100 nA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOD-123, Current - Average Rectified (Io): 250mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAV19W-G3-08
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BAV19W-G3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 250MA SOD123Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-123 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Tape & Reel (TR) |
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