BAV19W-G3-18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
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Technische Details BAV19W-G3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 250MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 100 V.
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|---|---|---|---|---|---|
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BAV19W-G3-18 | Vishay Semiconductors |
Small Signal Switching Diodes 120 Volt 200mA 50ns 1A IFSM |
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Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAV19W-G3-18 |
|
Hersteller: Vishay Semiconductors
Small Signal Switching Diodes 120 Volt 200mA 50ns 1A IFSM
Small Signal Switching Diodes 120 Volt 200mA 50ns 1A IFSM
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH